Placa de cubierta del calentador de nitruro de aluminio prensado en caliente
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Placa de cubierta del calentador de nitruro de aluminio prensado en caliente
Hot-pressing Aluminum Nitride heater Cover Plate with thinnest thickness 0.75mm.
1.The material is very difficult to machine due to the high hardness and brittle, so it is very easily to have chips or scratches when handling or machining which lead to very high rejection rate.
2.Hot pressing aluminum nitride ceramics are sintered by vacuum hot pressing, the sintering process is more difficult than pressureless sintering. The aluminum nitride purity is up to 99.5%(without any sintering additives), and density after hot pressing reaches 3.3g/cm3, it also has excellent thermal conductivity and high electrical insulation. The thermal conductivity can be from 90 con(metro·k) para 210 con(metro·k).
3.The thinnest thickness only 0.75mm which is also difficult to machine.
The application of the Hot-pressing Aluminum Nitride heater Cover Plate:
-Cover plate heater for semiconductor
– Cover plates and MRI equipment(Magnetic Resonance Imaging)
-High-power detectors, plasma generators, military radios
-Electrostatic chucks and heating plates for semiconductors and integrated circuits
– Infrared and microwave window material
Material Features
1.Microestructura uniforme
2.Alta conductividad térmica* (70-180 Wm-1K-1), adaptado a través de condiciones de procesamiento y aditivos
3.Alta resistividad eléctrica
4.Coeficiente de dilatación térmica cercano al del silicio
5.Resistencia a la corrosión y erosión
6.Excelente resistencia al choque térmico
7.Químicamente estable hasta 980°C en atmósferas de H2 y CO2, y en aire hasta 1380°C (oxidación superficial
ocurre alrededor de 780°C; la capa superficial protege la masa hasta 1380°C).
Typical Specification:
Pureza: | >99% |
Densidad: | >3.3 g/cm3 |
Compress Strength: | >3,350MPa |
Resistencia a la flexión: | 380MPa |
Bola de rodamiento de cerámica de circonio: | >90con(metro·K) |
Coeficiente de expansión termal: | 5.0 x 10-6/K |
Max. Temp: | 1,800° C |
Resistividad de volumen: | 7×1012 Ω·cm |
Resistencia dieléctrica: | 15 kV/mm |