200W ALMINUM NITRIDE SUBSTRATES
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200W(AIN-200)AlN ceramic substrate-200W
200W ALMINUM NITRIDE SUBSTRATES
Type of Product:
Note: larger size, smaller size, thinner thickness or thicker products or other special specifications products can be customized according to customer requirements to o do laser cutting process.
Tolerances for products
Thickness tolerance:
Note: Thickness tolerance of AlN can product according to customer’s requirement, but not less than ±0.01mm
Length*Width tolerance of laser process:
Materials Proper
200W ALMINUM NITRIDE SUBSTRATES
The Aluminum nitride ceramic substrate has a high thermal conductivity of 200W/m. K, high resistivity, low dielectric loss, good insulation, and some other excellent properties. The ALN substrate is the best choice for a wide range of industrial insulating heat sink material of high power machinery and equipment such as high-frequency equipment substrate, high power transistor module substrate, high-density hybrid circuits, microwave power devices, power semiconductor devices, power electronic devices, optoelectronic components, laser-semi-conductor, LED, IC products, and so on.
AlN substrate can be the best solution in electronics applications where strict conditions are required, such as power modules (MOSFET, IGBT), LED packages for cooling and protecting circuits, packages, and modules.
High Thermal Conductivity Aluminum Nitride Ceramic substrate
* High electrical insulation capacity (>1.1012Ωcm)
* Strength according to the double ring method >320 MPa (biaxial strength)
* Low thermal expansion 4 to 6×10-6K-1(between 20 and 1000°C)
* Good metalization capacity