Aluminum Nitride Ceramic substrate wafer Block
- Description
- Inquiry
Aluminum Nitride Ceramic substrate wafer Block
Aluminum Nitride is one of the few materials that offers electrical insulation and high thermal conductivity. This makes AlN extremely useful in high power electronic applications in heat sink and heat spreader applications.
Aluminum Nitride (AlN) is an excellent material to use if high thermal conductivity and electrical insulation properties are required. Because of it’s qualities, it is an ideal material for use in thermal management and electrical applications.
Some common applications of Aluminum Nitride include the following:
Heat sinks & heat spreaders Electrical insulators for lasers Chucks, clamp rings for semiconductor processing equipment Electrical insulators Silicon wafer handling and processing Substrates & insulators for microelectronic devices & opto electronic devices Substrates for electronic packages Chip carriers for sensors and detectors Chip lets Collets Laser heat management components Molten metal fixtures Packages for microwave devices.
Features
* Very high thermal conductivity (> 200 W/mK)
* High electrical insulation capacity (>1.1012Ωcm)
* Strength according to the double ring method >320 MPa (biaxial strength)
* Low thermal expansion 4 to 6×10-6K-1(between 20 and 1000°C)
* Good metalization capacity
Properties Sheet
Property | Unit | Alumina Nitride Ceramic |
Color | Grey | |
Mechanical Properties | ||
Density | g/cm3 | 3.31 |
Compressive Strength | MPa | 2100 |
Flexural Strength | MPa | 335 |
Vickers Hardness | GPa | 11 |
Thermal Properties | ||
Maximum Temperature | ||
Oxidizing | °C | 700 |
Inert | °C | 1300 |
Thermal Conductivity | 30 | |
@ 25°C | W/mK | 180 |
@ 300°C | W/mK | 130 |
Coefficient of Expansion | ||
CTE 25°C ➞ 100°C | 10^-6/°C | 3.6 |
CTE 25°C ➞ 300°C | 10^-6/°C | 4.6 |
CTE 25°C ➞ 500°C | 10^-6/°C | 5.2 |
CTE 25°C ➞ 1000°C | 10^-6/°C | 5.6 |
Specific Heat | 100°C | 750 |
Thermal Shock Resistance ΔT | °C | 400 |
Electrical Properties | ||
Dielectric Constant | 1 MHz | 8.6 |
Dielectric Strength | kV/mm | >15 |
Loss Tangent | 1 MHz | 5×10^-4 |
Aluminum Nitride Ceramic substrate wafer Block
Alumina Nitride Applications
- Heat sinks & heat spreaders
- Electrical insulators for lasers
- Chucks, clamp rings for semiconductor processing equipment
- Electrical insulators
- Silicon wafer handling and processing
- Substrates & insulators for microelectronic devices & opto electronic devices
- Substrates for electronic packages
- Chip carriers for sensors and detectors
- Chiplets
- Collets
- Laser heat management components
- Molten metal fixtures
- Packages for microwave devices