Metallized Ceramic Housing for Power Semiconductors

The description of

Metallized Ceramic Housing for Power Semiconductors
We have been supplying a variety of different ceramic grades with metallization, including 95% alumina, 99% alumina, zirconia, beryllia oxides. It makes us unable to meet the different need from different customers. 
 

Metallized Ceramic Housing for Power Semiconductors
The metalized alumina ceramic housings we manufactured are famous for the excellent bonding strength, dense, non-porous ceramic body and vacuum-tight performance, good high-temperature characteristics, and low coefficient of expansion, and so on.

Jointing types:
1.Alumina ceramic base +  Ag plating
2.Alumina ceramic base +  Mo/Mn metallization
3.Alumina ceramic base +  Mo/Mn metallization + Ni plating
4. Alumina ceramic base + Tungsten metalized + Au plating 

Cosmetic quality:
1. The flatness of both end sides must be less than 0,01mm
2.No blister on nickel ( outer) plating at the temperature up to 1150°C
3.No any crack on the surface
4.No any dark spot (  impurities)   on the external surface
5.With evenly glaze distribution  

Application:
Diode, Gas triode, Vacuum thyristor, the X-ray tube, and so on.

Overview of Main Physical Properties:

1.Good electrical insulation

2.High mechanical strength

3.Excellent wear resistance

4.Excellent corrosion resistance

5.Low dielectric constant

Overview of Main Applications:

1.Pump seals and other components

2.Wear resistant inserts

3.Insulating washers or bushings

4.Semiconductor components

5.Aerospace components

6.Automotive sensors

7.Electrical or electronic insulators

Metallized Ceramic Housing for Power Semiconductors

Descriptions of Metallization Processing:

Available Metallization&Plating Specifications: