Elementos eletrônicos de aquecimento composto PBN PG

Anel de arruela isolante cerâmico industrial de nitreto de boro poroso
Anel cerâmico poroso redondo de nitreto de boro pirolítico PBN
Elementos eletrônicos de aquecimento composto PBN PG
Elementos eletrônicos de aquecimento composto PBN PG 2
Elementos eletrônicos de aquecimento composto PBN PG
Elementos eletrônicos de aquecimento composto PBN PG 2

Elementos eletrônicos de aquecimento composto PBN PG

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  • Descrição
  • Investigação

PBN/PG Composite Heating electronic Elements

Descrição dos produtos

Elementos eletrônicos de aquecimento composto PBN PG:

Pyrolytic Boron Nitride is used as the substrate for the PBN heating element. Grafite Pirolítico(PG) is placed on the surface of PBN plates by the CVD method as a conductor and heater. Depending on the different requirements of applications, the PG heating element could be covered by PBN again or just stay open.
″* 4″
0.5”~4”
perfeitamente alcançado pela superfície quente do FUBOON
150~3000W
Máx.. Working Temp.
2400 ℃

Elementos eletrônicos de aquecimento composto PBN PG

As both PG and PBN are extremely pure (99.99% or even higher) and very stable in a vacuum or inert atmosphere, the PBN/PG Composite Heating Elements could be very durable and keep the chamber clean. It could be heated to 1600℃ in a very short time without the emission of any gas component. It also has good resistance to acid and alkali. These heating elements are ideal products for the semiconductor industry and applications that require high temperature, high vacuum, and high purity.
Propriedades do Material
Item
Unidade
Apparent Density
g / cm3
2.15-2.19
Permeabilidade ao gás(He)
cm3/s
<1*10-10
Microdureza(Botão)
N/mm2
691.88(a-b plane)
Resistência à tracção
N/mm2
153.86(parallel)
resistência à flexão
N/mm2
243.63(parallel)
197.76(parallel)
Modulus of elasticity
N/mm2
235690
Specific heat capacity
Cal/g.℃
0.371(@ 200℃)
0.442(@ 900℃)
Thermal conductivity 200℃
W/cm.k
0.6(parallel)
0.026(perpendicular)
Thermal conductivity 900℃
W/cm.k
0.4370(parallel)
0.028(perpendicular)
Rigidez dielétrica(RT)
KV / mm
56
Resistividade volumétrica
Cm
3.11*1011

 

Características
√High purity(>99.999%)PBN
√Uniform heating, the difference in temperature between ±3 degree at 1000 degree
√The temperature can rise up to 1700℃ with high speed(in non-active condition and vacuum)
√The temperature can rise up to 1700℃ with high speed(in non-active condition and vacuum)
√Can be made to complicated shape

 

Aplicativo
MBE heaters; MOCVD、 PECVD heaters.

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